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STM32F205RFT6 bảng dữ liệu(PDF) 103 Page - STMicroelectronics

tên linh kiện STM32F205RFT6
Giải thích chi tiết về linh kiện  ARM®-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
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STM32F20xxx
Electrical characteristics
183
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC® code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 42. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
25/120 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled, peripheral clock disabled
0.1 to 30 MHz
25
dBµV
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
4
-
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running with ART
enabled, PLL spread spectrum
enabled, peripheral clock disabled
0.1 to 30 MHz
28
dBµV
30 to 130 MHz
26
130 MHz to 1GHz
22
SAE EMI level
4
-
Table 43. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114
2
2000(2)
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to JESD22-C101
II
500
1. Guaranteed by characterization results, not tested in production.
2. On VBAT pin, VESD(HBM) is limited to 1000 V.



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