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STM32F205RFT6 bảng dữ liệu(PDF) 103 Page - STMicroelectronics |
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STM32F205RFT6 bảng dữ liệu(HTML) 103 Page - STMicroelectronics |
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103 / 184 page ![]() DocID15818 Rev 15 103/184 STM32F20xxx Electrical characteristics 183 Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC® code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. 6.3.14 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 42. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 25/120 MHz SEMI Peak level VDD = 3.3 V, TA = 25 °C, LQFP176 package, conforming to SAE J1752/3 EEMBC, code running with ART enabled, peripheral clock disabled 0.1 to 30 MHz 25 dBµV 30 to 130 MHz 130 MHz to 1GHz SAE EMI Level 4 - VDD = 3.3 V, TA = 25 °C, LQFP176 package, conforming to SAE J1752/3 EEMBC, code running with ART enabled, PLL spread spectrum enabled, peripheral clock disabled 0.1 to 30 MHz 28 dBµV 30 to 130 MHz 26 130 MHz to 1GHz 22 SAE EMI level 4 - Table 43. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C conforming to JESD22-A114 2 2000(2) V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to JESD22-C101 II 500 1. Guaranteed by characterization results, not tested in production. 2. On VBAT pin, VESD(HBM) is limited to 1000 V. |
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