OPA541

SBOS153B – SEPTEMBER 2000 – REVISED JANUARY 2016

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, +VS to –VS

80

V

Output current

See SOA, Figure 11

Power dissipation, Internal(2)

125

W

Input voltage, differential

+VS

Input voltage, common-mode

+VS

Temperature, pin solder, 10 s

300

°C

Junction temperature(2)

150

°C

AP

–40

85

Operating temperature (case)

AM, BM, SM

–55

125

°C

AP

–25

85

Storage temperature, Tstg

AM, BM, SM

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve

high MTTF.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V(ESD) Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply Voltage (V+ – V–)

10 (±5)

80 (±40)

V

Specified temperature

–40

125

°C

6.4 Thermal Information

OPA541

THERMAL METRIC(1)

KV (TO-220)

LMF (TO-3)

UNIT

11 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

21.5

—

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

17.4

—

°C/W

RθJB

Junction-to-board thermal resistance

9.2

—

°C/W

ψJT

Junction-to-top characterization parameter

1.5

—

°C/W

ψJB

Junction-to-board characterization parameter

9.2

—

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

0.1

3

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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