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LP5520TL/NOPB.A bảng dữ liệu(PDF) 26 Page - Texas Instruments

tên linh kiện LP5520TL/NOPB.A
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LP5520TL/NOPB.A bảng dữ liệu(HTML) 26 Page - Texas Instruments

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LP5520
SNVS440B – MAY 2007 – REVISED MARCH 2016
www.ti.com
Product Folder Links: LP5520
Submit Documentation Feedback
Copyright © 2007–2016, Texas Instruments Incorporated
Table 11. EEPROM Memory Map (continued)
ADDRESS
BITS [7:4]
BITS [3:0]
DEFINITION
4a
GC0[7:0]
Coefficient PWM value for green
–40...–25
4b
GC1[7:0]
–24...–9
4c
GC2[7:0]
–8...+7
4d
GC3[7:0]
8...23
4e
GC4[7:0]
24..39
4f
GC5[7:0]
40...55
50
GC6[7:0]
56...71
51
GC7[7:0]
72...87
52
GC8[7:0]
88...103
53
GC9[7:0]
From 104
54
BC0[7:0]
Coefficient PWM value for blue
–40...–25
55
BC1[7:0]
–24...–9
56
BC2[7:0]
–8...+7
57
BC3[7:0]
8...23
58
BC4[7:0]
24..39
59
BC5[7:0]
40...55
5a
BC6[7:0]
56...71
5b
BC7[7:0]
72...87
5c
BC8[7:0]
88...103
5d
BC9[7:0]
From 104
5e
SHF[7:0]
Self-heating factor
5f
RED_CUR
Red LED current
60
GREEN_CUR
Green LED current
61
BLUE_CUR
Blue LED current
62
Not used
...
6f
70
LM20B[11:8]
LM20K[11:8]
Scaling values for LM20 sensor
71
BB9[11:8]
BB8[11:8]
Base PWM value for blue (high bits)
72
BB7[11:8]
BB6[11:8]
73
BB5[11:8]
BB4[11:8]
74
BB3[11:8]
BB2[11:8]
75
BB1[11:8]
BB0[11:8]
76
GB9[11:8]
GB8[11:8]
Base PWM value for green (high bits)
77
GB7[11:8]
GB6[11:8]
78
GB5[11:8]
GB4[11:8]
79
GB3[11:8]
GB2[11:8]
7a
GB1[11:8]
GB0[11:8]
7b
RB9[11:8]
RB8[11:8]
Base PWM value for red (high bits)
7c
RB7[11:8]
RB6[11:8]
7d
RB5[11:8]
RB4[11:8]
7e
RB3[11:8]
RB2[11:8]
7f
RB1[11:8]
RB0[11:8]
The EEPROM data can be read, written, and erased through the serial interface. The boost converter is used to
generate the write and erase voltage for the memory. All operations are done in page mode. The page address
has to be written in the EEPROM_control register before access to the EEPROM. Incremental access can be
used both in I2C and SPI modes to speed up access. During EEPROM access the <rgb_auto> control bit in rgb
control register must be low.



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