LP3990-Q1

SNVSA66A – OCTOBER 2014 – REVISED DECEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2) (3)

MIN

MAX

UNIT

Input voltage

–0.3

6.5

V

Output voltage

–0.3

See(4)

V

ENABLE input voltage

–0.3

6.5

V

Continuous power dissipation internally limited

See(5)

Storage temperature range , Tstg

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.

(3)

All voltages are with respect to the potential at the GND pin.

(4)

The lower of VIN + 0.3 V or 6.5 V.

(5)

Internal thermal shutdown circuitry protects the device from permanent damage.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per AEC Q100-002(1)

±2000

V(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per AEC Q100-011

±1500

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input voltage, VIN

2

6

V

Enable input voltage, VEN

0

VIN

V

Junction temperature, TJ

(1)

–40

125

°C

(1)

TJ-MAX = (TA-MAX + (RθJA × PD-MAX)).

6.4 Thermal Information

LP3990

THERMAL METRIC(1)

YZR (DSBGA)

UNIT

4 PINS

RθJA

Junction-to-ambient thermal resistance

188.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

1.0

°C/W

RθJB

Junction-to-board thermal resistance

105.3

°C/W

ψJT

Junction-to-top characterization parameter

0.7

°C/W

ψJB

Junction-to-board characterization parameter

105.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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