LP5520TLSLASHNOPB datasheet(27/45 Pages) TI2

27 / 45 page

40H

5FH

EEPROM map

00H

1FH

3FH

20H

40H

60H

5FH

7FH

ee_page[1:0]

page0

page1

page2

page3

00H

1FH

3FH

20H

40H

60H

5FH

7FH

page0

page1

page2

page3

SRAM map

LP5520

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SNVS440B – MAY 2007 – REVISED MARCH 2016

Product Folder Links: LP5520

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The EEPROM has 4 pages; only one page at time can be mirrored at the register map. For getting access to

page, the number of page must be set by <ee_page[1:0]> bits in the EEPROM_control register(0DH). The page

Table 12. EEPROM Pages

<ee_page[1:0]>

(bits1-0)

page0 (00H-1FH)

page1 (20H-3FH)

page2 (40H-5FH)

page3 (60H-7FH)

The EEPROM consists of two types of memory, 128 × 8 EEPROM (non volatile memory) and 128 × 8

synchronous random access memory (SRAM). The EEPROM is used to store calibrated RGB control values

when the system is powered off. SRAM is used as working memory during operation.

Figure 31. EEPROM Memory

EEPROM content is copied into SRAM always when the chip is taken from stand-by mode to active mode.

Copying to SRAM can also be made during operation by writing the <ee_read> bit high and low in the EEPROM

control (0DH) register. For reading the data from the SRAM, the page number must be set with <ee_page[1:0]>

bits and the page read from addresses 40H – 5FH.

The EEPROM must be erased before programming. The erase command erases one page at time, which must

be selected with <ee_page[1:0]> bits. This operation starts after setting and resetting <ee_erase> and takes

about 100 ms after rising <ee_erase> bit. During erasing <ee_prog> bit of the EEPROM_CONTROL register is

low. Corresponding SRAM area is erased with this operation also. <ee_erase> and <ee_prog> can be set only

one command at a time (erase or program).

During programming the content of SRAM is copied to EEPROM, EEPROM programming cycle has two steps.

At first, write the whole content of the SRAM, all 4 pages. The whole page can be written during one SPI/I2C

cycle in the auto-increment mode. Second step is programming the EEPROM. This operation starts after writing

<ee_prog> high and back low and takes about 100 ms after rising <ee_prog> bit. During programming

<ee_prog> bit of the EEPROM_CONTROL register is low. For EEPROM erasing and programming the chip has

to be in active mode (<NSTBY> high), the boost must be off (<in_boost> low) and the boost voltage set to 18 V

(boost output register value 12H).

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