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LP3988-Q1

SLAS928B – MARCH 2013 – REVISED NOVEMBER 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

The lesser of VIN + 0.3 V or 6 V.

(4)

The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula: PD = (TJ – TA)

/ RθJA, where TJ is the junction temperature, TA is the ambient temperature, and R θJA is the junction-to-ambient thermal resistance. The

469-mW rating appearing under Absolute Maximum Ratings for the 5-pin SOT-23 package results from substituting the absolute-

maximum junction temperature, 150°C, for TJ, 70°C for TA, and 170.5°C/W for RθJA. More power can be dissipated safely at ambient

temperatures below 70°C . Less power can be dissipated safely at ambient temperatures above 70°C. The absolute-maximum power

dissipation can be increased by 5.86 mW for each degree below 70°C, and it must be derated by 5.86 mW for each degree above 70°C.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Voltage

−0.3

6.5

V

Power Good (OUT, EN)

−0.3

See(3)

V

Junction temperature, TJ

150

°C

Power dissipation(4)

469

mW

Storage temperature, Tstg

−65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1)

±2000

V

Charged-device model (CDM), per AEC Q100-011

±750

(1)

All voltages are with respect to the potential at the GND pin.

(2)

The minimum VIN is dependant on the device output option. For VOUT(NOM) < 2.5 V, VIN(MIN) equals 2.5 V. For VOUT(NOM) ≥ 2.5 V, VIN(MIN)

equals VOUT(NOM) + 200 mV.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

NOM

MAX

UNIT

IN(2)

2.5

6

V

OUT, EN

0

VIN

V

Junction temperature, TJ

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics.

(2)

Thermal resistance value RθJA is based on the EIA/JEDEC High-K printed circuit board defined by: JESD51-7 - High Effective Thermal

Conductivity Test Board for Leaded Surface Mount Packages.

6.4 Thermal Information

THERMAL METRIC(1)

LP3988-Q1

UNIT

DBV (SOT-23)

5 PINS

RθJA

(2)

Junction-to-ambient thermal resistance, High-K

170.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

124.4

°C/W

RθJB

Junction-to-board thermal resistance

30.9

°C/W

ψJT

Junction-to-top characterization parameter

17.6

°C/W

ψJB

Junction-to-board characterization parameter

30.4

°C/W