LM3485

SNVS178H – JANUARY 2002 – REVISED DECEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

TYP

MAX

UNIT

PGATE voltage

−0.3

36

V

FB voltage

−0.3

5

V

ISENSE voltage

−1.0

36

V

ADJ voltage

−0.3

36

V

Maximum junction temperature

150

°C

Power dissipation (at TA = 25°C)

417

mW

Lead temperature

Vapor phase (60 sec.)

215

°C

Infrared (15 sec.)

220

°C

Storage temperature, Tstg

−65

160

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

4.5

35

V

TJ

Operating junction temperature

−40

125

°C

6.4 Thermal Information

LM3485

THERMAL METRIC(1)

DGK (VSSOP)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

163.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

56.7

°C/W

RθJB

Junction-to-board thermal resistance

83.2

°C/W

ψJT

Junction-to-top characterization parameter

5.9

°C/W

ψJB

Junction-to-board characterization parameter

81.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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