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TSC5301D bảng dữ liệu(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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Giải thích chi tiết về linh kiện  High Voltage NPN Transistor with Diode
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TSC5301D
High Voltage NPN Transistor with Diode
1/5
Version: A07
TO-92
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
1A
VCE(SAT)
1.1V @ IC / IB = 1A / 0.25A
Features
●
Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
●
No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
●
Low Base Drive Requirement
●
Suitable for Half Bridge Light Ballast Application
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor with Diode
Ordering Information
Part No.
Package
Packing
TSC5301DCT B0
TO-92
1Kpcs / Bulk
TSC5301DCT A3
TO-92
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
1
A
Collector Peak Current (tp <5ms)
ICM
2
A
Base Current
IB
0.5
A
Base Peak Current (tp <5ms)
IBM
1
A
Total Dissipation @ Tc ≤ 25
oC
Ptot
0.6
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Block Diagram
Pin Definition:
1. Base
2. Collector
3. Emitter


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