TIP145T/146T/147T Rev. C

1

TIP145T/146T/147T

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors

• High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.)

• Industrial Use

• Complement to TIP140T/141T/142T

Absolute Maximum Ratings * T

C=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Symbol

Parameter

Value

Units

BVCBO

Collector-Base Voltage

: TIP145T

: TIP146T

: TIP147T

- 60

- 80

- 100

V

V

V

BVCEO

Collector-Emitter Voltage : TIP145T

: TIP146T

: TIP147T

- 60

- 80

- 100

V

V

V

BVEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 10

A

ICP

Collector Current (Pulse)

- 15

A

IB

Base Current (DC)

- 0.5

A

PC

Collector Dissipation (TC=25°C)

80

W

TJ

Junction Temperature

150

°C

TSTG

Storage Junction Temperature Range

- 65 ~ 150

°C

TO-220

1

1.Base

2.Collector

3.Emitter

Equivalent Circuit

B

E

C

R1

R2

R1

8k

Ω

≅

R2

0.12k

Ω

≅