JDH2S02FS

1

Schottky Barrier Diode Silicon Epitaxial Planar

JDH2S02FS

Start of commercial production

2024-05

1. Applications

•

UHF Detectors

2. Features

•

Suitable for reducing the product size due to the use of a small two-pin package supporting high-density

mounting

3. Packaging and Internal Circuit

SOD-923

1: Cathode

2: Anode

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Reverse voltage

Forward current

Junction temperature

Storage temperature

Symbol

VR

IF

Tj

Tstg

Rating

10

10

125

-55 to 125

Unit

V

mA

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note:

This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be using proper

antistatic precautions for the worktable, operator, solder iron and so on.

2024-01-30

Rev.2.0

©2024

Toshiba Electronic Devices & Storage Corporation