NTMFS4D0N04XM

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2

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 2)

RqJC

3.5

°C/W

Thermal Resistance, Junction−to−Ambient (Notes 1, 2)

RqJA

42

1. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.

2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular

conditions noted.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1 mA, TJ = 25°C

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

DV(BR)DSS/

DTJ

ID = 1 mA. Referenced to 25°C

15

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, TJ = 25°C

1

mA

VDS = 40 V, TJ = 125°C

20

Gate−to−Source Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

100

nA

ON CHARACTERISTICS

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 6 A, TJ = 25°C

3.4

3.9

mW

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 30 mA, TJ = 25°C

2.5

3.5

V

Gate Threshold Voltage Temperature

Coefficient

DVGS(TH)/

DTJ

VGS = VDS, ID = 30 mA

−7.36

mV/°C

Forward Transconductance

gFS

VDS = 5 V, ID = 6 A

32

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, VDS = 25 V, f = 1 MHz

784

pF

Output Capacitance

COSS

504

Reverse Transfer Capacitance

CRSS

10

Output Charge

QOSS

20

nC

Total Gate Charge

QG(TOT)

VGS = 10 V, VDD = 32 V, ID = 6 A

12

Threshold Gate Charge

QG(TH)

2

Gate−to−Source Charge

QGS

3

Gate−to−Drain Charge

QGD

2

Gate Resistance

RG

f = 1 MHz

1.6

W

SWITCHING CHARACTERISTICS

Turn−On Delay Time

td(ON)

Resistive Load,

VGS = 10 V, VDD = 32 V,

ID = 6 A, RG = 0 W

7

ns

Rise Time

tr

8

Turn−Off Delay Time

td(OFF)

10

Fall Time

tf

9

SOURCE−TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 6 A, TJ = 25°C

0.78

1.2

V

VGS = 0 V, IS = 6 A, TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dI/dt = 100 A/ms,

IS = 6 A, VDD = 32 V

53

ns

Charge Time

ta

9

Discharge Time

tb

44

Reverse Recovery Charge

QRR

18

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.