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STM32G474CB bảng dữ liệu(PDF) 86 Page - STMicroelectronics

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STM32G474CB bảng dữ liệu(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
STM32G474xB STM32G474xC STM32G474xE
86/232
DS12288 Rev 1
VPVD4
PVD threshold 4
Rising edge
2.69
2.74
2.79
V
Falling edge
2.59
2.64
2.69
VPVD5
PVD threshold 5
Rising edge
2.85
2.91
2.96
V
Falling edge
2.75
2.81
2.86
VPVD6
PVD threshold 6
Rising edge
2.92
2.98
3.04
V
Falling edge
2.84
2.90
2.96
Vhyst_BORH0
Hysteresis voltage of BORH0
Hysteresis in
continuous
mode
-20
-
mV
Hysteresis in
other mode
-30
-
Vhyst_BOR_PVD
Hysteresis voltage of BORH
(except BORH0) and PVD
--
100
-
mV
IDD
(BOR_PVD)(2)
BOR(3) (except BOR0) and
PVD consumption from VDD
--
1.1
1.6
µA
VPVM1
VDDA peripheral voltage
monitoring (COMP/ADC)
Rising edge
1.61
1.65
1.69
V
Falling edge
1.6
1.64
1.68
VPVM2
VDDA peripheral voltage
monitoring (OPAMP/DAC)
Rising edge
1.78
1.82
1.86
V
Falling edge
1.77
1.81
1.85
Vhyst_PVM1
PVM1 hysteresis
-
-
10
-
mV
Vhyst_PVM2
PVM2 hysteresis
-
-
10
-
mV
IDD
(PVM1/PVM2)
(2)
PVM1 and PVM2
consumption from VDD
--
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit



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