ISL73847SEHDEMO2Z datasheet(36/40 Pages) RENESAS

tên linh kiện	ISL73847SEHDEMO2Z

Giải thích chi tiết về linh kiện	Radiation Hardened 12V Half-Bridge GaN FET Driver

PDF	40 Pages

Scroll/Zoom	100%

nhà sản xuất	RENESAS [Renesas Technology Corp]

Trang chủ	http://www.renesas.com

Logo

36 / 40 page

R34DS0017EU0104 Rev.1.04

Page 36

Jan 31, 2025

ISL73041SEH Datasheet

LGL

11 (b)

2529.14

688.13

110

1.25

LGH

12 (a)

2529.14

943.20

110

1.25

LGH

12 (b)

2529.14

1193.42

110

1.25

PHS

13 (a)

2529.14

1448.71

110

1.25

PHS

13 (b)

2529.14

1698.42

110

1.25

UGL

14 (a)

2523.5

1954.00

110

1.25

UGL

14 (b)

2523.5

2204.00

110

1.25

UGH

15 (a)

2204.00

2529.14

110

1.25

UGH

15 (b)

1954.00

2529.14

110

1.25

BOOT

16 (a)

1504.48

2529.14

110

1.25

BOOT

16 (b)

1254.48

2529.14

110

1.25

SGND

PAD

169.99

175.36

110

1.25

1. Origin of coordinate is the bottom left hand corner of die.

2. Pads 9 through 16 have double bond pads denoted as (a) and (b). Pad number designation intentionally assigned to match package pin

number.

Table 3. Layout X-Y Coordinates (Centroid of Bond Pad)[1] (Cont.)

Pad Name

Pad

Number[2]

X Coordinate

(µm)

Coordinate

(µm)

Pad X

Dimension

(µm)

Pad Y

Dimension

(µm)

Bond Wire Diameter

(0.001”)

ISL73847SEHDEMO2Z bảng dữ liệu(PDF) 36 Page - Renesas Technology Corp

ISL73847SEHDEMO2Z bảng dữ liệu(HTML) 36 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40

bảng dữ liệu tải về

Link URL