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TLEGD1100B bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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TLEGD1100B bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
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2 / 9 page ![]() TL(BD,EGD)1100B(T11) 2007-10-01 2 Electrical Characteristics (Ta = 25°C) Forward Voltage VF Reverse Current IR Product Name Min Typ. Max IF Max VR TLBD1100B 2.7 3.3 4.0 TLEGD1100B 2.7 3.3 4.0 20 10 4 Unit V mA μA V Optical Characteristics–1 (Ta = 25°C) Luminous Intensity IV Product Name Min Typ. Max IF Available Iv rank (Note 2) TLBD1100B 40 70 200 20 PA / QA / RA TLEGD1100B 100 200 500 20 RA / SA / TA Unit mcd mA Note 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Iv rank Rank symbol Min Max PA 40 80 QA 63 125 RA 100 200 SA 160 320 TA 250 500 Unit mcd mcd Optical Characteristics–2 (Ta = 25°C) Emission Spectrum Peak Emission Wavelength λp Δλ Dominant Wavelength λd Product Name Min Typ. Max Typ. Min Typ. Max IF TLBD1100B ⎯ 468 ⎯ 22 463 470 477 TLEGD1100B ⎯ 523 ⎯ 35 518 528 538 20 Unit nm nm nm mA Note 3: Caution ESD withstand voltage according to MIL STD 883D, Method 3015.7 : ≥1000V When handling this LED, take the following measures to prevent the LED from being damaged or otherwise adversely affected. 1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor. 2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap is good for this purpose. 3) Ground all tools including soldering irons. This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source. |
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