HM-6514/883

FN2996 Rev.1.00

Page 3 of 9

March 1997

Absolute Maximum Ratings

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Thermal Resistance

JA

JC

CERDIP Package . . . . . . . . . . . . . . . .

75oC/W

15oC/W

Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC

Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V

Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VCC -2.0V to VCC

Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max

TABLE 1. HM-6514/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Output Low Voltage

VOL

VCC = 4.5V

IOL = 3.2mA

1, 2, 3

-55oC

 TA  +125oC-

0.4

V

Output High Voltage

VOH

VCC = 4.5V

IOH = -1.0mA

1, 2, 3

-55oC

 TA  +125oC2.4

-

V

Input Leakage Current

II

VCC = 5.5V,

VI = GND or VCC

1, 2, 3

-55oC

 TA  +125oC

-1.0

+1.0

A

Input/Output Leakage

Current

IIOZ

VCC = 5.5 V,

VIO = GND or VCC

1, 2, 3

-55oC

 TA  +125oC

-1.0

+1.0

A

Data Retention Supply

Current

ICCDR

VCC = 2.0V,

E = VCC -0.3V,

IO = 0mA

1, 2, 3

-55oC

 TA  +125oC-

25

A

Operating Supply

Current

ICCOP

VCC = 5.5V, (Note 2)

E = 1MHz

1, 2, 3

-55oC

 TA  +125oC-

7

mA

Standby Supply

Current

ICCSB

VCC = 5.5V,

E = VCC-0.3V,

IO = 0mA

1, 2, 3

-55oC

 TA  +125oC-

50

A

NOTES:

1. All voltages referenced to device GND.

2. Typical derating 1.5mA/MHz increase in ICCOP.