Page <2>

V1.0

16/09/19

Transistor

NPN, TO-3

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Characteristic

Symbol

Min.

Max.

Unit

Off Characteristics

Collector-Emitter Sustaining Voltage (1)

(lC = 200mA, lB = 0)

IEO (sus)

60

-

V

Collector-Base Sustaining Voltage (1)

(Ic = 200mA, Rbe = 100Ω)

VCER(sus)

70

-

Collector Cut off Current

(VCE = 30V, IB = 0)

ICEO

-

0.7

mA

Collector Cut off Current

(VCE = 100V, VBE (off) = 1.5V)

(VCE = 100V, VBE (off) = 1.5V, TC = 150°C)

ICEX

-

1

5

Emitter Cut off Current

(VEB = 7V, IC = 0 )

IEBO

-

5

Electrical Characteristics (TC = 25°C unless otherwise noted)

On Characteristic (1)

DC Current Gain

(lC = 4A, VCE = 4V)

(lC = 10A, VCE = 4V)

hfe

20

5

70

-

Collector-Emitter Saturation Voltage

(lC = 4A, IB = 0.4A)

(lC = 10A, IB = 3.3A)

Vce (sat)

-

1.1

3

V

Base-Emitter On Voltage

(lC = 4A, VCE = 4V)

Vbe (sat)

-

1.5

Dynamic Characteristics

Current Gain - Bandwidth Product (2)

(lc = 500mA,Vce = 10V, f = 1MHz)

ft

2.5

-

MHz

Small-Signal Current Gain

(lC = 1A, VCE = 4V DC, f = 1 MHz)

hfe

15

120

-

Second Breakdown Characteristics

(1). Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.

(2). ft = |hfe| . ftest