IRGPF30F datasheet(24/35 Pages) IRF

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HIGH TEMPERATURE REVERSE BIAS (HTRB)

Test circuit

Conditions

Bias:

Vce = As required

Temperature:

Tmax

Duration:

2000 Hours nominal

DUT

Test points:

168, 500, 1000,

1500, 2000, Hours nominal

BIAS

D = Diode for CoPack devices only

Purpose

Failure Modes

Sensitive Parameters

V(BR)CES, ICES, IGES, VGE(th)

High temperature reverse bias (HTRB) burn-in is to stress the devices with the

applied voltage in the blocking mode while elevating the junction temperature. This

will accelerate any blocking voltage degradation process.

The primary failure mode for HTRB stress is a gradual degradation of the breakdown

characteristics or V(BR)CES. This degradation has been attributed to the presence of

foreign materials and polar/ionic contaminants. These materials, migrating under

application of electric field at high temperature, can perturb the electric field

termination structure.

Extreme care must be exercised in the course of a long term test to avoid potential

hazards such as electrostatic discharge or electrical overstress to the gate during

test. Failures arising from this abuse can be virtually indistinguishable from true

HTRB failures which results from the actual stress test.

IGBT / CoPack

Quarterly Reliability Report

Page 24 of 35

IRGPF30F bảng dữ liệu(PDF) 24 Page - International Rectifier