CAB3R5M12DM4

5

Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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Typical Performance

Figure 7. 3rd Quadrant Characteristic vs. Junction

Temperatures at VGS = - 4 V (Body Diode)

Figure 8. Typical Capacitances vs. Drain to Source Voltage

(0 - 200V)

Figure 9. Typical Capacitances vs. Drain to Source Voltage

(0 - 1200V)

Figure 10. Threshold Voltage vs. Junction Temperature

Figure 11. Switching Energy vs. Drain Current (VDD = 600 V)

Figure 12. Switching Energy vs. Drain Current (VDD = 800 V)

0

100

200

300

400

500

600

0

1

2

3

4

5

6

7

8

Source-Drain Voltage, VSD (V)

Conditions:

tp <

VGS =

300 µs

-4 V

150 °C

125 °C

-40 °C

100 °C

25 °C

0 °C

-25 °C

175 °C

0.01

0.1

1

10

100

0

50

100

150

200

Drain-Source Voltage, VDS (V)

Coss

Crss

Ciss

Conditions:

TVJ = 25 °C

VAC =

f =

25 mV

100 kHz

0.01

0.1

1

10

100

0

200

400

600

800

1000

1200

Drain-Source Voltage, VDS (V)

Coss

Crss

Ciss

Conditions:

TVJ = 25 °C

VAC =

f =

25 mV

100 kHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-50

-25

0

25

50

75

100

125

150

175

200

Virtual Junction Temperature, TVJ (°C)

Conditions:

VGS = VDS

IDS = 81 mA

EOff+EOn

ERR

EOff

EOn

0

2

4

6

8

10

12

14

16

18

0

100

200

300

400

500

600

700

Source Current, IS (A)

Conditions:

TVJ = 25 °C

VDS = 600 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

Lσ = 17.4 nH

EOff+EOn

ERR

EOff

EOn

0

5

10

15

20

25

0

100

200

300

400

500

600

700

Source Current, IS (A)

Conditions:

TVJ = 25 °C

VDS = 800 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

Lσ = 17.4 nH