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ADP151WAUJZ-1.8-R7 bảng dữ liệu(PDF) 14 Page - Analog Devices

tên linh kiện ADP151WAUJZ-1.8-R7
Giải thích chi tiết về linh kiện  Ultralow Noise, 200 mA, CMOS Linear Regulator
PDF  23 Pages
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nhà sản xuất  AD [Analog Devices]
Trang chủ  http://www.analog.com
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ADP151WAUJZ-1.8-R7 bảng dữ liệu(HTML) 14 Page - Analog Devices

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Data Sheet
ADP151
APPLICATIONS INFORMATION
analog.com
Rev. J | 14 of 23
less than 1% error. Capacitor C3 is necessary to stabilize the LDO.
A value of 1 µF is adequate.
Figure 34 through Figure 38 show the typical performance of the
4 V LDO circuit.
The noise performance of the 4 V LDO circuit is only about 1 µV
worse than the same LDO used at 3.3 V because the output noise
of the circuit is almost solely determined by the LDO and not the
external components. The small difference may be attributed to the
internally generated noise in the LDO ground current working with
R2. By keeping R2 small, this noise contribution can be minimized.
The PSRR of the 4 V circuit is as much as 10 dB poorer than the
3.3 V LDO with 500 mV of headroom because the ground current of
the LDO varies slightly with input voltage. This, in turn, modulates
VOFFSET and reduces the PSRR of the regulator. By increasing the
headroom to 1 V, the PSRR performance is nearly restored to the
performance of the fixed output LDO.
Figure 34. 4 V LDO Circuit, Typical Load Regulation over Temperature
Figure 35. 4 V LDO Circuit, Typical Line Regulation over Load Current
Figure 36. 4 V LDO Circuit, Typical RMS Output Noise, 10 Hz to 100 kHz
Figure 37. 4 V LDO Circuit, Typical PSRR vs. Load Current, 1 V Headroom
Figure 38. 4 V LDO Circuit, Typical PSRR vs. Load Current, 500 mV
Headroom



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