IRFR/U6215

2

www.irf.com

Parameter

Min.

Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-150

–––

–––

V

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

-0.20 –––

V/°C

Reference to 25°C, ID = -1mA

–––

––– 0.295

VGS = -10V, ID = -6.6A

„

–––

–––

0.58

VGS = -10V, ID = -6.6A

„TJ = 150°C

VGS(th)

Gate Threshold Voltage

-2.0

–––

-4.0

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

3.6

–––

–––

S

VDS = -50V, ID = -6.6A

†

–––

–––

-25

µA

VDS = -150V, VGS = 0V

–––

–––

-250

VDS = -120V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

–––

100

nA

VGS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

VGS = -20V

Qg

Total Gate Charge

–––

–––

66

ID = -6.6A

Qgs

Gate-to-Source Charge

–––

–––

8.1

nC

VDS = -120V

Qgd

Gate-to-Drain ("Miller") Charge

–––

–––

35

VGS = -10V, See Fig. 6 and 13

„†

td(on)

Turn-On Delay Time

–––

14

–––

VDD = -75V

tr

Rise Time

–––

36

–––

ns

ID = -6.6A

td(off)

Turn-Off Delay Time

–––

53

–––

RG = 6.8Ω

tf

Fall Time

–––

37

–––

RD = 12Ω, See Fig. 10

„†

Between lead,

6mm (0.25in.)

from package

and center of die contact

…

Ciss

Input Capacitance

–––

860

–––

VGS = 0V

Coss

Output Capacitance

–––

220

–––

pF

VDS = -25V

Crss

Reverse Transfer Capacitance

–––

130

–––

ƒ = 1.0MHz, See Fig. 5

†

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

nH

IGSS

LS

Internal Source Inductance

–––

7.5

–––

RDS(on)

Static Drain-to-Source On-Resistance

LD

Internal Drain Inductance

–––

4.5

–––

IDSS

Drain-to-Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

†

–––

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

–––

-1.6

V

TJ = 25°C, IS = -6.6A, VGS = 0V

„

trr

Reverse Recovery Time

–––

160

240

ns

TJ = 25°C, IF = -6.6A

Qrr

Reverse RecoveryCharge

–––

1.2

1.7

µC

di/dt = 100A/µs

„†

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

A

-13

-44

Notes:

‚ Starting T

J = 25°C, L = 14mH

RG = 25Ω, IAS = -6.6A. (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

** When mounted on 1" square PCB (FR-4 or G-10 Material )

For recommended footprint and soldering techniques refer to application note #AN-994

ƒ I

SD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

† Uses IRF6215 data and test conditions

„ Pulse width ≤ 300µs; duty cycle ≤ 2%

… This is applied for I-PAK, L

S of D-PAK is measured between lead and

center of die contact

Ω

S

D

G

S

D

G