IRFU3910PBF.. datasheet(1/11 Pages) IRF

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IRFR/U3910

HEXFET® Power MOSFET

S

D

G

VDSS = 100V

RDS(on) = 0.115Ω

ID = 16A

Description

5/11/98

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

16

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

12

A

IDM

Pulsed Drain Current

60

PD @TC = 25°C

Power Dissipation

79

W

Linear Derating Factor

0.53

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

150

mJ

IAR

Avalanche Current

9.0

A

EAR

Repetitive Avalanche Energy

7.9

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.9

RθJA

Junction-to-Ambient (PCB mount) **

–––

50

°C/W

RθJA

Junction-to-Ambient

–––

110

Thermal Resistance

D -P A K

T O -252 A A

I-P A K

TO -25 1A A

l Ultra Low On-Resistance

l Surface Mount (IRFR3910)

l Straight Lead (IRFU3910)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

PD - 91364B

www.irf.com

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRFU3910PBF	393Kb / 10P	HEXFET Power MOSFET
Kersemi Electronic Co.,...	IRFU3910PBF	3Mb / 10P	Ultra Low On-Resistance
International Rectifier	IRFU3910PBF	397Kb / 11P	Ultra Low On-Resistance
VBsemi Electronics Co.,...	IRFU3910PBF	1,013Kb / 7P	N-Channel 100 V (D-S) MOSFET

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