General Purpose Transistor

Comchip Technology CO., LTD.

Page 2

QW-JTR136

Rating and Characteristic Curves (2SD1898-HF Series)

REV:B

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Emitter cut-off current

1

V

V

V

µA

V(BR)CEO

V(BR)CBO

V(BR)EBO

IEBO

IC = 1mA, IB = 0

IC = 50μA, IE = 0

IE = 50μA, IC = 0

Min

120

80

5

DC current gain

1

390

VEB = 4V, IC = 0

hFE

82

Collector cut-off current

ICBO

VCB = 100V, IE = 0

VCE = 3V, IC = 0.5A

µA

Collector-emitter saturation voltage

VCE(sat)

IC = 500mA, IB = 20mA

Transition frequency

fT

VCE = 10V, IC = -50mA, f = 100MHz

100

MHz

Collector output capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

V

pF

20

Typ

Classification of hFE(1)

Rank

Range

82-180

120-270

180-390

2SD1898P-HF

2SD1898Q-HF

2SD1898R-HF

0.15

0.4

Base to Emitter Voltage, VBE (V)

Collector to Emitter Voltage, VCE (V)

1000

Fig.1 - Grounded Emitter Propagation

Characteristics

0

0.4

0.8

2.0

100

10

0.4

1.2

0

0.2

0.8

0.6

Fig.2 - Grounded Emitter Output

Characteristics

0

10

8

12

1.2

1.6

0.1

1

Ta=25°C

VCE=5V

2

6

4

1.0

Ta=25°C

IB=0mA

1mA

2mA

3mA

4mA

5mA

6mA