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TA8401F/FG bảng dữ liệu(PDF) 4 Page - Toshiba Semiconductor

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TA8401F/FG bảng dữ liệu(HTML) 4 Page - Toshiba Semiconductor

  TA8401F/FG Datasheet HTML 1Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 2Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 3Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 4Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 5Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 6Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 7Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 8Page - Toshiba Semiconductor TA8401F/FG Datasheet HTML 9Page - Toshiba Semiconductor Next Button
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TA8401F/FG
2006-3-2
4
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Peak supply voltage
VCC
18
V
Output current
IO (AVE.)
0.5
A
350 (Note 1)
Power dissipation
PD
550 (Note 2)
mW
Operating temperature
Topr
−30~75
°C
Storage temperature
Tstg
−55~150
°C
Note 1: No heat sink
Note 2: Mounted on a PCB (PCB area, 20
× 20 × 0.8 mm; cu area, over 60%)
Electric Characteristics
(unless otherwise specified, Ta = 25°C, VCC = 5 V)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICC1
1
Output open CW / CCW mode
―
13
20
ICC2
1
Output open stop mode
―
11
15
ICC3
1
Output open brake mode
―
17
26
Supply current
ICC4
1
Inhibit (INPUT4 = ”L”)
―
2.4
7
mA
Vsat1
2
IO1 = 500 mA, lower side
(Output A, B)
―
0.3
0.5
Output saturation voltage
Vsat2
2
IO2 = 25 mA, upper side
(Output a, b)
―
0.3
0.55
V
Output TR leakage current
IL
3
VC = 15 V
―
―
50
µA
“H” Level
VIN 1, 2 (H)
―
―
2.0
―
VCC
Input voltage
“L” Level
VIN 1, 2 (L)
―
―
―
―
0.8
V
Input current
“L” Level
IIN1, 2
4
Input “L”, VIN = 0 V
(source current)
―
―
20
µA
“H” Level
VIN 3, 4 (H)
―
―
1.0
―
VCC
Input voltage
“L” Level
VIN 3, 4 (L)
―
―
―
―
0.3
V
Input current
“H” Level
IIN3, 4
4
Input “H” (sink current)
VIN = 1 V
―
―
30
µA
Diode forward voltage
VF
5
IF = 0.5 A, VCC = 0 V
―
1.3
―
V



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