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TLP351 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

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TLP351
2007-10-01
1
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP351
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Input
LED
Tr1
Tr2
Output
H
ON
ON
OFF
H
L
OFF
OFF
ON
L
Unit: mm
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
8
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: VO (output)
7: NC
8: VCC
7
6
5
1
2
3
4
Pin Configuration (top view)
Schematic
A 0.1
μF bypass capacitor must be connected
between pin 8 and 5.
2
+
3
−
VCC
VO
GND
(Tr1)
(Tr2)
ICC
IO
IF
VF
5
6
8


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