TLP351F

2007-10-01

1

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP351F

Inverter for Air Conditioner

IGBT/Power MOSFET Gate Drive

Industrial Inverter

The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a

integrated photodetector.

This unit is 8-lead DIP package.

TLP351F is suitable for gate driving circuit of IGBT or power MOSFET.

Especially TLP351F is capable of “direct” gate drive of lower Power

IGBTs.

Absolute maximum ratings and electrical characteristics are the same as

TLP351 technical datasheet.

• Peak output current: ±0.6 A (max)

• Guaranteed performance over temperature: −40 to 100°C

• Supply current: 2 mA (max)

• Power supply voltage: 10 to 30 V

• Common mode transient immunity: 10 kV/μs

• Isolation voltage: 3750 Vrms

• Construction mechanical rating

• Option(D4)

VDE Approved : DIN EN60747-5-2

Highest Permissible Over Voltage

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option(D4)”

• Construction mechanical rating

Truth Table

Input

LED

Tr1

Tr2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

Unit: mm

TOSHIBA

11-10C402

Weight: 0.54 g (typ.)

8

1: NC

2: Anode

3: Cathode

4: NC

5: GND

7: NC

7

6

5

1

2

3

4

A 0.1

μF bypass capacitor must be connected

between pin 8 and 5.

2

+

3

−

GND

(Tr1)

(Tr2)

5

6

8

Schematic

7.62mm pitch

TLP351 type

10.16mm pitch

TLP351F type

Creepage distance

Clearance

Insulation thickness

6.4 mm (min)

6.4 mm (min)

0.4 mm (min)

8.0 mm (min)

8.0 mm (min)

0.4 mm (min)