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2SA1588 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

tên linh kiện 2SA1588
Giải thích chi tiết về linh kiện  Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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2SA1588 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor

  2SA1588_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1588_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1588_07 Datasheet HTML 3Page - Toshiba Semiconductor  
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2SA1588
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1588
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
• Complementary to 2SC4118
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−35
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−500
mA
Base current
IB
−50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −35 V, IE = 0
⎯
⎯
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
⎯
⎯
−0.1
μA
hFE (1)
VCE = −1 V, IC = −100 mA
70
⎯
400
DC current gain
(Note)
hFE (2)
VCE = −6 V, IC = −400 mA
25
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = −100 mA, IB = −10 mA
⎯
−0.1
−0.25
V
Base-emitter voltage
VBE
VCE = −1 V, IC = −100 mA
⎯
−0.8
−1.0
V
Transition frequency
fT
VCE = −6 V, IC = −20 mA
⎯
200
⎯
MHz
Collector output capacitance
Cob
VCB = −6 V, IE = 0, f = 1 MHz
⎯
13
⎯
pF
Note: hFE (1) classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
) Marking Symbol
hFE (2) classification O: 25 (min), Y: 40 (min), GR: 75 (min)
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)


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