TLP832(F)

2007-10-01

3

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

1.00

1.15

1.30

V

Reverse current

―

―

10

μA

Peak emission wavelength

―

940

―

nm

Dark current

―

―

0.1

μA

Peak sensitivity wavelength

―

870

―

nm

Current transfer ratio

5

―

100

%

Collector

−emitter

saturation voltage

―

0.1

0.35

V

Rise time

―

15

50

Fall time

(Note 2)

―

15

50

μs

(Note 2): Switching time measurement circuit and waveform

Precautions

1. When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse

the entire package in the cleaning solvent. Chemical residue on the LED emitter or the phototransistor may

adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency.

2. Care must taken in relation to the environment in which the device is to be installed.

Oil or chemicals may cause the package to melt or crack.

3. Mount the device on a level surface.

4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device

may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it.

5. Conversion efficiency falls over time due to the current which flows in the infrared LED.

When designing a circuit, take into account this change in conversion efficiency over time.

The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1.

10%

90%

(0)

O

P

(t)

O

P

(0)

F

I

/

C

I

(t)

F

I

/

C

I

=