4409 datasheet(2/4 Pages) TUOFENG

2 / 4 page

Electrical Characteristics (T

A=25°C, unless otherwise noted)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

· Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body Leakage Current

VGS=±25V, VDS=0V

±100

· On Characteristicsc

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1.0

-3.0

IDS(on)

On State Drain Current

VDS=-5V, VGS=-10V

VGS=-10V, ID=-12A

RDS(on)

Drain-Source On-State Resistance

VGS=-4.5V, ID=-10A

gFS

Forward Transconductance

VDS=-10V, ID=-5A

· Dynamic Characteristics d

Ciss

Input Capacitance

2076

2500

Coss

Output Capacitance

503

Crss

Reverse Transfer Capacitance

VDS=-15V, VGS=0V, f=1MHz

302

423

Gate Resistance

VDS=0V, VGS=0V, f=1MHz

· Switching Characteristicsd

Total Gate Charge

37.2

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=-15V, ID=-12A, VGS=-10V

10.4

td(on)

Turn-on Delay Time

12.4

Turn-on Rise Time

8.2

td(off)

Turn-off Delay Time

25.6

Turn-off Fall Time

VDD=-15V, RL=1.25W,

VGS=-10V, RG=3W

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IDS=-12A, dI/ dt=100A/ uS

· Drain-Source Diode Characteristics

VSD

Drain-Source Diode Forward Voltage

VGS=0V, IS=-1A

-1

Drain-Source Diode Forward Current

-4.2

Note: Pulse Test: Pulse Width

£300us, Duty Cycle£2%

Shenzhen Tuofeng Semiconductor Technology co., LTD

4409

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