Rev.5.00, Apr.29.2003, page 1 of 10

HAF1004(L), HAF1004(S)

Silicon P Channel MOS FET Series Power Switching

REJ03G0028-0500Z

(Previous ADE-208-629B (Z))

Rev.5.00

2003.04.29

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has

the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the

gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Features

• Logic level operation to (–4 to –6 V Gate drive)

• High endurance capability against to the shut-down circuit

• Built-in the over temperature shut-down circuit

• Latch type shut down operation (need 0 voltage recovery)

Outline

1 2

3

1 2

3

1. Gate

2. Drain

(Flange)

3. Source

DPAK-2

DPAK-S

D

S

G

Gate resistor

Latch

Circuit

Gate

Shut-

down

Circuit

Tempe-

rature

Senching

Circuit