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CLS02 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

tên linh kiện CLS02
Giải thích chi tiết về linh kiện  Switching-Mode Power Supply (Secondary-Rectification) Applications (Low Voltage)
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CLS02 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor

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CLS02
2007-11-06
1
TOSHIBA Schottky Barrier Diode
CLS02
Switching-Mode Power Supply (Secondary-Rectification)
Applications (Low Voltage)
DC/DC Converter Applications
• Forward voltage: VFM = 0.55 V (max)
• Average forward current: IF (AV) = 10 A
• Repetitive peak reverse voltage: VRRM = 40 V
• Suitable for compact assembly due to small surface-mount package:
“L−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF (AV)
10 (Note.1)
A
Non-repetitive peak surge current
IFSM
100 (50 Hz)
A
Junction temperature
Tj
−40~125
°C
Storage temperature range
Tstg
−40~150
°C
Note1: Tℓ
= 75°C
Rectangular waveform (
α = 180°), VR = 20 V
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 3.0 A (pulse test)
⎯
0.36
⎯
VFM (2)
IFM = 5.0 A (pulse test)
⎯
0.41
⎯
V
Peak forward voltage
VFM (3)
IFM = 10 A (pulse test)
⎯
0.5
0.55
IRRM (1)
VRRM = 5 V (pulse test)
⎯
4.0
⎯
μA
Peak repetitive reverse current
IRRM (2)
VRRM = 40 V (pulse test)
⎯
0.03
1.0
mA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
⎯
420
⎯
pF
Thermal resistance
(junction to ambient)
Rth (j-a)
Device mounted on a glass-epoxy
board
(board size: 50 mm
× 50 mm)
(board thickness: 1.6 t)
(soldering land)
Cathode 5.7 mm × 6.2 mm
Anode
4.5 mm × 3.4 mm
⎯
⎯
100
°C/W
Thermal resistance
(junction to lead)
Rth (j-ℓ)
⎯
⎯
⎯
5
°C/W
Unit: mm
0.6
± 0.1
4
± 0.2
1.5
± 0.1
2.7
± 0.2
①
②
①
ANODE
②
CATHODE
1.2
± 0.1
JEDEC
⎯
JEITA
⎯
TOSHIBA
3-4F1A
Weight: 0.15 g (typ.)


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