RN1101F

∼RN1106F

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101F,RN1102F,RN1103F

RN1104F,RN1105F,RN1106F

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2101F~RN2106F

Equivalent Circuit And Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1101F~1106F

50

V

RN1101F~1104F

10

Emitter-base voltage

RN1105F, 1106F

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1101F~1106F

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

EIAJ

―

TOSHIBA

2-2H1A

Weight: 2.3 mg

Unit in mm

Type No.

R1 (kΩ)

R2 (kΩ)

RN1101F

4.7

4.7

RN1102F

10

10

RN1103F

22

22

RN1104F

47

47

RN1105F

2.2

47

RN1106F

4.7

47