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SSM3J111TU bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

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Giải thích chi tiết về linh kiện  Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
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Trang chủ  http://www.semicon.toshiba.co.jp/eng
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SSM3J111TU
2007-11-01
2
Switching Time Test Circuit
Marking
Equivalent Circuit (top view)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=−0.1mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Take this into consideration when using the device.
Handling Precaution
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
VDD = -10 V
RG = 4.7 Ω
D.U. <= 1%
VIN: tr, tf < 5 ns
Common Source
Ta
= 25°C
IN
0
−2.5V
10
μs
VDD
OUT
RL
(c) VOUT
ton
90%
10%
−2.5 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD
(b) VIN
(a) Test circuit
JJ4
1
2
3
12
3



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