SSM3J01F

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01F

High Speed Switching Applications

• Small package

• Low gate threshold voltage

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

Gate-source voltage

±10

V

DC

−700

Drain current

Pulse

−1400

mA

Drain power dissipation (Ta

= 25°C)

200

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)