MT3S06FS

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S06FS

VHF~UHF Band Low-Noise Amplifier Applications

VHF~UHF Band Buffer Applications

•

Superior performance in buffer applications

•

Superior noise characteristics

Characteristic

Symbol

Rating

Unit

Collector-base voltage

10

V

Collector-emitter voltage

5

V

Emitter-base voltage

1.5

V

Collector current

15

mA

Base current

7

mW

Collector power dissipation

85

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: 10mm

Marking

Unit: mm

JEDEC

―

JEITA

―

Toshiba

2-1E1A

Weight: 0.0006 g (typ.)

2

1

3

0 3

fSM

0.1±0.05

3

0.8±0.05

1.0±0.05

1

2

0.1±0.05

1.BASE

2.EMITTER

3.COLLECOTR