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IL3285 bảng dữ liệu(PDF) 13 Page - NVE Corporation |
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IL3285 bảng dữ liệu(HTML) 13 Page - NVE Corporation |
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13 / 19 page ![]() IL3285/IL3222 13 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 (952) 829-9217 www.nve.com YouTube.com/NveCorporation iso-apps@nve.com Method Approximate Immunity Immunity Description Field applied in direction H1 ±20 Gauss A DC current of 16 A flowing in a conductor 1 cm from the device could cause disturbance Field applied in direction H2 ±70 Gauss A DC current of 56 A flowing in a conductor 1 cm from the device could cause disturbance Field applied in any direction but with boost capacitor (470 pF) in circuit ±250 Gauss A DC current of 200 A flowing in a conductor 1 cm from the device could cause disturbance Table 1. Magnetic Immunity Data Rate and Magnetic Field Immunity It is easier to disrupt an isolated DC signal with an external magnetic field than it is to disrupt an isolated AC signal. Similarly, a DC magnetic field will have a greater effect on the device than an AC magnetic field of the same effective magnitude. For example, signals with pulses longer than 100 μs are more susceptible to magnetic fields than shorter pulse widths. For input signals faster than 1 MHz, rising in less than 3 ns, a 470 pF field-boost capacitor provides as much as 400 Gauss immunity, while the same input capacitor might provide just 70 Gauss immunity at 50 kHz. |
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