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IL3085 bảng dữ liệu(PDF) 2 Page - NVE Corporation |
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IL3085 bảng dữ liệu(HTML) 2 Page - NVE Corporation |
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2 / 20 page ![]() IL3085 2 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 (952) 829-9217 www.nve.com YouTube.com/NveCorporation iso-apps@nve.com Absolute Maximum Ratings(6) Parameter Symbol Min. Typ. Max. Units Test Conditions Storage Temperature TS −55 150 °C Junction Temperature TJ −55 150 °C Voltage Range at A or B Bus Pins −8 12.5 V Supply Voltage(1) VDD1, VDD2 −0.5 7 V Digital Input Voltage −0.5 VDD + 0.5 V Digital Output Voltage −0.5 VDD + 1 V ESD (all bus nodes) 7 kV HBM Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Units Test Conditions Supply Voltage VDD1 VDD2 3.0 4.5 5.5 5.5 V Ambient Operating Temperature IL3085-1E, IL3085-3E, IL3085E IL3085TE TA −40 85 125 °C Junction Temperature IL3085-1E, IL3085-3E, IL3085E IL3085TE TJ −40 100 140 °C Input Voltage at any Bus Terminal (separately or common mode) VI VIC 12 −7 V High-Level Digital Input Voltage VIH 2.4 3.0 VDD1 V VDD1 = 3.3 V VDD1 = 5.0 V Low-Level Digital Input Voltage VIL 0 0.8 V Differential Input Voltage(2) VID +12 / −7 V High-Level Output Current (Driver) IOH 60 mA High-Level Digital Output Current (Receiver) IOH 8 mA Low-Level Output Current (Driver) IOL −60 mA Low-Level Digital Output Current (Receiver) IOL −8 mA Digital Input Signal Rise and Fall Times tIR, tIF DC Stable Insulation Specifications Parameter Symbol Min. Typ. Max. Units Test Conditions Creepage Distance (external) IL3085-1 IL3085-3 IL3085 3.2 4.0 8.03 8.3 mm Per IEC 60601 Total Barrier Thickness (internal) 0.012 0.013 mm Barrier Resistance RIO >1014 Ω 500 V Barrier Capacitance CIO 7 pF f = 1 MHz Leakage Current 0.2 μARMS 240 VRMS, 60 Hz Comparative Tracking Index CTI ≥175 V Per IEC 60112 High Voltage Endurance (Maximum Barrier Voltage for Indefinite Life) AC DC VIO 1000 1500 VRMS VDC At maximum operating temperature Barrier Life 44000 Years 100°C, 1000 VRMS, 60% CL activation energy |
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