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MP4210 bảng dữ liệu(PDF) 1 Page - Toshiba Semiconductor

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Giải thích chi tiết về linh kiện  High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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MP4210 bảng dữ liệu(HTML) 1 Page - Toshiba Semiconductor

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MP4210
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne)
MP4210
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
• 4-V gate drivability
• Small package by full molding (SIP 10 pins)
• High drain power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.12 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
5
Drain current
Pulse
IDP
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(4-device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
129
mJ
Avalanche current
IAR
5
A
1-device
operation
EAR
0.2
Repetitive avalanche
energy
(Note 2) 4-device
operation
EART
0.4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)


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