K3067 datasheet(2/3 Pages) TOSHIBA

2 / 3 page

2SK3067

2006-11-08

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

—

±10

μA

Gate−source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

—

Drain cut−off current

IDSS

VDS = 600 V, VGS = 0 V

—

100

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

—

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

—

4.0

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 1 A

—

4.2

5.0

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 1 A

0.8

1.7

—

Input capacitance

Ciss

—

380

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

120

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

Total gate charge (Gate−source

plus gate−drain)

—

Gate−source charge

Qgs

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 480 V, VGS = 10 V, ID = 2 A

—

Source−Drain Ratings and Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

IDRP

t = 1 ms

—

Pulse drain reverse current

(Note 1)

IDRP

t = 100 μs

—

Forward voltage (diode)

VDSF

IDR = 2 A, VGS = 0 V

—

−1.5

Reverse recovery time

trr

—

1000

—

Reverse recovery charge

Qrr

IDR = 2 A, VGS = 0 V

dIDR / dt = 100 A / μs

—

5.0

—

μC

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K3067

Part No. (or abbreviation code)

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