Mechanical data

- Case: DFN1006-2L package,

molded plastic.

- Mounting position: Any.

RoHS Device

Halogen Free

Page 1

Comchip Technology CO., LTD.

QW-JP144

REV:B

SMD ESD Protection Diode

Dimensions in inches and (millimeter)

DFN1006-2L

0.016(0.40)

0.014(0.35)

0.002(0.05)

Max.

0.041(1.05)

0.039(0.99)

0.026(0.65)

0.023(0.59)

0.021(0.53)

0.017(0.43)

0.011(0.27)

0.007(0.17)

0.026(0.65)

REF

Features

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

TJ

°C

Storage temperature range

TSTG

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

-55 to +125

-55 to +150

±30

90

- Small body outline dimensions.

- Protects one I/O or power line.

- Low leakage current.

Circuit Diagram

0.003(0.075)

REF

0.003(0.075)

0.007(0.175)

0.003(0.075)

0.007(0.175)

0.003(0.07)

REF

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Unit

Conditions

VC

V

V

VRWM

5

V

Max

VBR

V

IT = 1mA

6

Reverse leakage current

IR

VRWM = 5V

Reverse stand-off voltage

200

0.01

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

240

200

Dynamic resistance (Note 1, 2)

RDYN

Clamping voltage (Note 1)

VC

Reverse breakdown voltage

Clamping voltage

Ω

IPP = 16A, TP = 100ns

IPP = 4A, TP = 100ns

nA

Notes: 1. TLP setting: tp=100ns, tr=0.2ns, ITLP and VTLP sample window: t1=70ns to t2=90ns.

2. Dynamic resistance calculated from IPP=4A to IPP=16A using “Best Fit”.

VC

V

10

IPP = 90A, TP = 8/20µs

- IEC 61000-4-2 (ESD) ±30kV (air/contact)

IEC 61000-4-5 (Lightning) 90A (8/20µs)

1080

Pin 1

Pin 2

6.49

6.66

CPDQ5V0MAHT-HF

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