NXP Semiconductors

SL3S1005

UCODE 9xm

10 Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to RFN. [1] [2]

Symbol

Parameter

Conditions

Min

Max

Unit

Bare die limitations

Tstg

storage temperature

-55

+125

°C

Tamb

ambient temperature

-40

+85

°C

VESD

electrostatic discharge

voltage

human body model

(HBM)[3]

[4]

-

± 2

kV

Pad limitations

Pi

input power

maximum power

dissipation, RF1/RF2 pad

-

100

mW

Table 13. Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this

specification is not implied.

[2]

This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge.

Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.

[3]

According to ANSI/ESDA/JEDEC JS-001

[4]

For ESD measurement, the die chip has been mounted into a CDIP8 package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent

standards.

SL3S1005

All information provided in this document is subject to legal disclaimers.

© 2025 NXP B.V. All rights reserved.

Product data sheet

Rev. 3.1 — 12 February 2025

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