2SD2131

2006-11-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

2SD2131

High-Power Switching Applications

Hammer Drive, Pulse Motor Drive Applications

• Zener diode included between collector and base.

• Unclamped inductive load energy: E = 150 mJ (min)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60 ± 10

V

Collector-emitter voltage

60 ± 10

V

Emitter-base voltage

7

V

DC

5

Collector current

Pulse

8

A

Base current

0.5

A

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

30

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Base

Emitter

≈ 5 kΩ

≈ 150 Ω

Collector