1SS412

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS412

General-Purpose Rectifier Applications

Low forward voltage

Low reverse current

Small total capacitance

Small package

: SC-70

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

300 *

mA

Average forward current

100 *

mA

Surge current (10 ms)

1 *

A

Power dissipation

P

100

mW

Junction temperature

150

°C

Storage temperature range

−55

∼150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*:

Unit rating. Total rating = unit rating × 0.7

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Forward voltage

―

―

1.0

1.3

V

Reverse current

―

―

0.1

10

nA

Total capacitance

(between cathode and anode)

―

―

3.0

―

pF

Marking

P9

JEDEC

―

JEITA

SC-70

TOSHIBA

1-2P1C

Weight: 0.006 g (typ.)

Unit: imm