1SS187 datasheet(1/3 Pages) TOSHIBA

tên linh kiện	1SS187

Giải thích chi tiết về linh kiện	Ultra High Speed Switching Application

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nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

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1SS187

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS187

Ultra High Speed Switching Application

Small package

: SC-59

Low forward voltage

: VF (3) = 0.92V (typ.)

Fast reverse recovery time: trr = 1.6ns (typ.)

Small total capacitance

: CT = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

VRM

85

V

Reverse voltage

VR

80

V

Maximum (peak) forward current

IFM

300

mA

Average forward current

IO

100

mA

Surge current (10ms)

IFSM

2

A

Power dissipation

P

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ

Max

Unit

VF (1)

―

IF =1mA

―

0.61

―

VF (2)

―

IF = 10mA

―

0.74

―

Forward voltage

VF (3)

―

IF = 100mA

―

0.92

1.20

V

IR (1)

―

VR = 30V

―

0.1

Reverse current

IR (2)

―

VR = 80V

―

0.5

μA

Total capacitance

CT

―

VR = 0, f = 1MHz

―

2.2

4.0

pF

Reverse recovery tme

trr

―

IF = 10mA (Fig.1)

―

1.6

4.0

ns

Marking

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

1-3G1D

Weight: 0.012g

Unit: mm

Số phần tương tự - 1SS187

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	1SS187	128Kb / 2P	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) 07-May-1997
TRANSYS Electronics Lim...	1SS187	68Kb / 1P	Plastic-Encapsulated Diodes
Galaxy Semi-Conductor H...	1SS187	370Kb / 3P	Surface mount switching diode Rev.A
Guangdong Kexin Industr...	1SS187	34Kb / 1P	ULTRA HIGH SPEED SWITCHING APPLICATION
SEMTECH ELECTRONICS LTD...	1SS187	311Kb / 2P	SILICON EPITAXIAL PLANAR DIODE

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