DG40A12TCFS datasheet(4/12 Pages) STARPOWER

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DG40A12TCFS

IGBT Discrete

8/4/2023

4/12

B01

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IC=40A,VGE=0V,Tvj=25

2.35

2.80

IC=40A,VGE=0V,Tvj=150

2.30

IC=40A,VGE=0V,Tvj=175

2.25

trr

Diode Reverse

Recovery Time

VR=600V,IF=40A,

-di/dt=560A/μs,VGE=-15V,

Ls=40nH ,Tvj=25

142

Recovered Charge

1.90

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

0.46

trr

Diode Reverse

Recovery Time

VR=600V,IF=40A,

-di/dt=560A/μs,VGE=-15V,

Ls=40nH ,Tvj=150

240

Recovered Charge

3.92

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

1.24

trr

Diode Reverse

Recovery Time

VR=600V,IF=40A,

-di/dt=560A/μs,VGE=-15V,

Ls=40nH ,Tvj=175

253

Recovered Charge

4.38

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

1.41

Discrete Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.297

0.549

K/W

RthJA

Junction-to-Ambient

K/W

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