TPD1018F

2006-10-31

3

Characteristics

Symbol

Rating

Unit

Drain-source Voltage

60

V

DC

25

V

Supply Voltage

Pulse

60 (Rs = 1Ω, τ = 250ms)

V

DC

-0.5~25

V

Input Voltage

Pulse

V

Output Current

0.5

A

Input Current

±10

mA

Power Dissipation

300

mW

Operating Temperature

-40~125

°C

Junction Temperature

150

°C

Storage Temperature

-55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Operating Supply Voltage

―

―

5

12

25

V

Tj = 85°C

―

120

300

μA

Supply Current

―

―

1

1.5

mA

―

3.5

―

―

V

Input Voltage

―

―

―

1.5

V

―

10

100

μA

Input Current

―

-0.2

―

0.2

μA

On-voltage

―

Tj = 25°C

―

0.21

0.24

V

Tj = 25°C

―

0.7

0.8

Ω

On-resistance

―

Tj = -40~85°C

―

―

1.2

Ω

Diagnosis Output

Voltage

“L” Level

―

―

―

0.4

V

Diagnosis Output

Current

“H” Level

―

―

―

10

μA

Output Leakage Current

―

―

―

100

μA

Overcurrent Protection

―

0.5

―

3

A

Temperature

150

160

200

°C

Thermal Shutdown

Hysteresis

―

―

―

20

50

°C

Voltage

―

25

―

―

V

Overvoltage

Protection

Hysteresis

―

―

―

2

7

V

―

50

―

μs

Switching Time

1

―

10

―

μs