TPCF8304 datasheet(3/7 Pages) TOSHIBA

3 / 7 page

TPCF8304

2006-11-17

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

―

±10

μA

Drain cut-off current

IDSS

VDS = -30 V, VGS = 0 V

―

-10

μA

V (BR) DSS

ID = -10 mA, VGS = 0 V

-30

―

Drain-source breakdown voltage

V (BR) DSX

ID = -10 mA, VGS = 20 V

-15

―

Gate threshold voltage

Vth

VDS = -10 V, ID = -1 mA

-0.5

―

-1.2

RDS (ON)

VGS = -4.5 V, ID = -1.6 A

―

105

Drain-source ON resistance

RDS (ON)

VGS = -10 V, ID = -1.6 A

―

Forward transfer admittance

|Yfs|

VDS = -10 V, ID = -1.6 A

2.9

5.9

―

Input capacitance

Ciss

―

600

―

Reverse transfer capacitance

Crss

―

Output capacitance

Coss

VDS = -10 V, VGS = 0 V, f = 1 MHz

―

Rise time

―

5.3

―

Turn-on time

ton

―

Fall time

―

8.4

―

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

―

Total gate charge

(gate-source plus gate-drain)

―

Gate-source charge 1

Qgs1

―

1.4

―

Gate-drain (“Miller”) charge

Qgd

VDD ∼− -24 V, VGS = -10 V,

ID = -3.2 A

―

2.7

―

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

―

-12.8

Forward voltage (diode)

VDSF

IDR = -3.2 A, VGS = 0 V

―

1.2

VDD ∼− -15 V

-10 V

VGS 0 V

ID = -1.6 A

VOUT

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