TPCF8201 datasheet(5/7 Pages) TOSHIBA

tên linh kiện	TPCF8201

Giải thích chi tiết về linh kiện	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

Trang chủ	http://www.semicon.toshiba.co.jp/eng

Logo

5 / 7 page

TPCF8201

2007-01-16

Ambient temperature Ta (°C)

RDS (ON) – Ta

160

−40

120

−80

120

100

ID = 3A,1.5A,0.75A

VGS = 2.0 V

VGS = 4.5 V

ID = 3A,1.5A,0.75A

VGS = 2.5 V

ID = 1.5A,0.75A

ID = 3A

Common source

Pulse test

IDR – VDS

Drain-source voltage VDS (V)

0.1

−0.4

0.3

0.5

−0.8

−1.2

VGS = 0 V

2.5

2.0

Common source

= 25°C

Pulse test

Capacitance – VDS

Drain-source voltage VDS (V)

0.1

100

1000

30 50

100

Ciss

Coss

Crss

Common source

VGS = 0 V

= 1 MHz

= 25°C

Vth – Ta

Ambient temperature Ta (°C)

0.4

0.6

0.8

1.2

−80

−40

120

160

0.2

Common source

VDS = 10 V

ID = 200μA

Pulse test

PD – Ta

Ambient temperature Ta (°C)

120

160

0.4

0.8

1.2

1.6

(4)

(1)

(3)

(2)

= 5 s

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

Total gate charge Qg (nC)

Dynamic input / output

characteristics

VDD = 16 V

VDS

VGS

Common source

ID = 3 A

= 25°C

Pulse test

TPCF8201 bảng dữ liệu(PDF) 5 Page - Toshiba Semiconductor

TPCF8201 bảng dữ liệu(HTML) 5 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL