GD600CUX65C2S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD600CUX65C2S

IGBT Module

3/15/2018

4/9

Preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IC=600A,VGE=0V,Tj=25

1.55

2.00

IC=600A,VGE=0V,Tj=125

1.50

IC=600A,VGE=0V,Tj=150

1.45

Recovered

Charge

VR=300V,IF=600A,

-di/dt=6000A/

μs,V

GE=-15V

Tj=25

17.0

μC

IRM

Peak Reverse

Recovery Current

205

Erec

Reverse Recovery

Energy

4.00

Recovered

Charge

VR=300V,IF=600A,

-di/dt=6000A/

μs,V

GE=-15V

Tj=125

36.0

μC

IRM

Peak Reverse

Recovery Current

300

Erec

Reverse Recovery

Energy

9.30

Recovered

Charge

VR=300V,IF=600A,

-di/dt=6000A/

μs,V

GE=-15V

Tj=150

42.0

μC

IRM

Peak Reverse

Recovery Current

330

Erec

Reverse Recovery

Energy

10.5

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.080

0.150

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.025

0.048

0.010

K/W

Terminal Connection Torque, Screw M6

Mounting Torque, Screw M6

2.5

3.0

5.0

N.m

Weight of Module

300

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