BAV102 datasheet(3/10 Pages) NXP

3 / 10 page

BAV102_BAV103_3

Product data sheet

Rev. 03 — 16 August 2007

3 of 10

NXP Semiconductors

BAV102; BAV103

Single general-purpose switching diodes

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Tj =25 °C prior to surge.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.

IFSM

non-repetitive peak

forward current

square wave

[3]

tp =1 µs-

tp = 100 µs-

tp =1s

Ptot

total power dissipation

Tamb ≤ 25 °C

[2] -

400

junction temperature

175

°C

Tamb

ambient temperature

−65

+175

°C

Tstg

storage temperature

−65

+175

°C

Table 6.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

375

K/W

Rth(j-t)

thermal resistance from

junction to tie-point

300

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1]

IF = 100 mA

1.0

IF = 200 mA

1.25

reverse current

BAV102

VR = 150 V

100

VR = 150 V; Tj = 150 °C

100

µA

BAV103

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR =0V

trr

reverse recovery time

[2] --50

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