GD100FFX65C5SF datasheet(4/10 Pages) STARPOWER

4 / 10 page

GD100FFX65C5SF

IGBT Module

7/15/2020

4/10

preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=100A,VGE=0V,Tj=25

1.55

2.00

IF=100A,VGE=0V,Tj=125

1.50

IF=100A,VGE=0V,Tj=150

1.45

Recovered

Charge

VR=300V,IF=100A,

-di/dt=3520A/μs,VGE=-15V

Tj=25

4.6

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

1.32

Recovered

Charge

VR=300V,IF=100A,

-di/dt=3520A/μs,VGE=-15V

Tj=125

8.6

μC

IRM

Peak Reverse

Recovery Current

121

Erec

Reverse Recovery

Energy

2.37

Recovered

Charge

VR=300V,IF=100A,

-di/dt=3520A/μs,VGE=-15V

Tj=150

9.9

μC

IRM

Peak Reverse

Recovery Current

127

Erec

Reverse Recovery

Energy

2.64

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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